MOCVD (Metal-Organic Chemical Vapor Deposition)
The Phaethon 100U is a high-temperature MOCVD system specialized for the epitaxial growth of III-nitride semiconductors (AlN, GaN) for Ultra-Wide Bandgap (UWBG) applications. It supports precise control of metal-organic precursors such as TMAl and TMGa with NH$_3$, enabling the synthesis of high-quality crystalline layers on wafer scales.
SDS6K MPCVD (Microwave Plasma Chemical Vapor Deposition)
The SDS6K is a high-performance 2.45 GHz microwave plasma CVD reactor designed for high-quality single-crystal and polycrystalline diamond synthesis. It provides a stable, high-density plasma environment with precise control over growth parameters for homo/heteroepitaxy, supporting advanced research in UWBG power semiconductors and diamond-based electronics.
Custom-built MPCVD Ⅰ
MPCVD System for boron-doped diamond (BDD) growthCustom-built system for boron-doped diamond (BDD) synthesis. Optimized for 2-inch homo/heteroepitaxial growth, serving as a core facility for p-type diamond layers and high-performance electrochemical electrode research.
Custom-built MPCVD Ⅱ
MPCVD System for for high-quality undoped diamond growthCustom-built reactor engineered for high-purity undoped diamond growth. Supports epitaxial synthesis on substrates up to 1.5 inches, ensuring minimal defect density and atomic-scale surface smoothness for fundamental studies.
UHV-MPCVD (Ultra-High Vacuum MPCVD)
UHV MPCVD System for Quantum-grade, high-purity diamondSpecialized UHV system for quantum-grade diamond growth. Maintains extreme vacuum levels to eliminate background impurities (N, Si), enabling the synthesis of high-purity diamond for NV center-based quantum technologies.
DC-PECVD (Direct Current Plasma Enhanced CVD)
PECVD System for Bias-Enhanced Nucleation (BEN)Engineered for Bias Enhanced Nucleation (BEN) in heteroepitaxial diamond growth. Provides precise DC bias control to generate high-density nuclei, determining the final crystallinity and interface quality of diamond films.
HT(High-Temperature)-Sputtering System
Sputtering system for metal buffer layer
High-vacuum system for metal buffer layer deposition. Enables high-temperature sputtering to manage lattice mismatch and thermal strain during diamond heteroepitaxial growth.
2D Material CVD System
CVD for the nucleation and synthesis of carbon-based 2D materials
Dedicated system for the synthesis of carbon-based 2D materials and novel nanostructures. Optimized for precise nucleation control of graphene and h-BN for next-generation nano-electronics and heterostructures.