Journal Articles

Y Nam, T Kwak, S Oh, G Yoo, DS Kim, SW Kim, O Nam, "Gamma-ray radiation hardness of Ir contacts in H-terminated diamond MESFETs", Appl. Phys. Lett. 128, 173504 (2026)

T Kwak, E Noh, S Kim, O Nam, "Selective p+ regrowth for boron-doped diamond MOSFETs on heteroepitaxial (100) diamond with breakdown voltages over 800 V", Diamond and Relat. Mater.,113639, (2026)

M Kim, DQ Tran, PP Paskov, U Choi, O Nam, V Darakchieva, "Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs," Appl. Phys. Lett., 128 (4), (2026)

M Yoon, T Kwak, J Jeong, S Oh, Y Nam, G Yoo, O Nam, "Heteroepitaxial growth of (100) single-crystal diamond with reduced wafer bow via SiO₂ Nanospheres interlayer," Diamond Relat. Mater., 113468, (2026)

Y Nam, T Kwak, H Ma, S Oh, S Park, M Yoon, D Kyung, G Yoo, SW Kim, O Nam, "Normally-off Al/HfO2/Al-gated diamond field effect transistor on a heteroepitaxial diamond substrate," Diamond Relat. Mater., 113258, (2026)

T Kwak, Y Nam, Y Kwon, G Yoo, S Kim, O Nam, "Depletion-mode and enhancement-mode diamond MOSFETs fabricated on the same heteroepitaxial diamond substrates," Diamond Relat. Mater., 153, 112022, (2025)

S Mohan, J Jeong, J Park, J Lee, J Heo, O Nam, "Pulsed NH3 flow growth of high quality AlGaN layers for realizing the Al-rich AlGaN channel HEMT," J. Alloys Compd., 1031, 180891, (2025)

T Kwak, S Oh, Y Nam, H Kang, G Yoo, O Nam, "Twin-free (111) single-crystal diamond heteroepitaxially grown on (1-102) sapphire substrate," Diamond Relat. Mater., 112857, (2025)

DQ Tran, M Kim, O Nam, V Darakchieva, PP Paskov, "Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces," arXiv preprint, 2510.11936, (2025)

J Park, J Jeong, S Mohan, J Lee, J Heo, O Nam, "Al‐Rich AlGaN Channel/AlN Buffer High‐Electron‐Mobility Transistor with Superlattice Structure," Phys. Status Solidi A, 222 (23), 2500049, (2025)

S Mohan, J Jeong, J Park, J Lee, J Heo, O Nam, "Impact of AlGaN Superlattices on the Thermal Stability of Al-Rich AlGaN Channel HEMTs," IEEE Trans. Electron Devices, 73 (1), 543-551, (2025)

MH Sheen, YH Lee, O Nam, YW Kim, "Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (11 2¯ 2) substrate using cathodoluminescence in transmission electron microscopy," J. Vac. Sci. Technol. A, 42 (2), (2024)

S Mohan, J Jeong, M Kim, Y Heo, J Park, J Lee, J Kim, J Heo, O Nam, "Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes," Phys. Status Solidi A, 221 (13), 2300642, (2024)

Y Heo, J Jeong, S Mohan, M Kim, J Park, J Lee, O Nam, "Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition," Phys. Status Solidi A, 221 (21), 2400058, (2024)

KS Im, M Kim, O Nam, "Device and noise performances of AlGaN/GaN high electron mobility transistors with various GaN channel layers grown on aln buffer layer," Phys. Status Solidi A, 221 (21), 2400014, (2024)

D Jung, M Kim, U Choi, K Kim, O Nam, "Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN: Si/AlN DH-HEMT structure," Solid-State Electron., 199, 108482, (2023)

U Choi, ST Yoo, M Kim, B So, C Cheon, M Yang, M Lee, KC Park, O Nam, "Far-UVC emission of polarity-engineered AlGaN MQW using carbon nanotube-based cold cathode electron beam," Appl. Phys. Lett., 122 (9), (2023)

S Han, T Kwak, U Choi, H Kang, G Yoo, S Kim, O Nam, "Electrical characteristics of metal–insulator diamond semiconductor Schottky barrier diode grown on heteroepitaxial diamond substrate," Phys. Status Solidi A, 220 (6), 2200680, (2023)

T Kwak, S Han, U Choi, SW Kim, O Nam, "Diamond Schottky barrier diode fabricated on high-crystalline quality misoriented heteroepitaxial (001) diamond substrate," Diamond Relat. Mater., 133, 109750, (2023)

MH Sheen, YH Lee, J Jang, J Baek, O Nam, CW Yang, YW Kim, "Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 11 2¯ 2 InGaN/GaN Multi-Quantum Wells," Nanomaterials, 13 (13), 1946, (2023)

M Kim, U Choi, K Kim, Y Heo, K Lee, S Lee, O Nam, "Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz," Phys. Status Solidi A, 220 (16), 2200826, (2023)

U Choi, H Shin, T Kwak, SW Kim, O Nam, "Growth and characterization of heteroepitaxial (001) and (111) diamond on Ir/sapphire structures," Diamond Relat. Mater., 121, 108770, (2022)

U Choi, T Kwak, S Han, SW Kim, O Nam, "High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate," Diamond Relat. Mater., 121, 108782, (2022)

KS Im, U Choi, M Kim, J Choi, HS Kim, HY Cha, SJ An, O Nam, "On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer," Appl. Phys. Lett., 120 (1), (2022)

KH Kim, MT Ha, H Lee, M Kim, O Nam, YJ Shin, SM Jeong, SY Bae, "Microstructural gradational properties of Sn-doped gallium oxide heteroepitaxial layers grown using mist chemical vapor deposition," Materials, 15 (3), 1050, (2022)

M Kim, U Choi, K Kim, O Nam, "Growth of self-assembled nanovoids embedded AlN layer on a low-temperature buffer by metal organic chemical vapor deposition," Thin Solid Films, 752, 139261, (2022)

T Kwak, J Lee, U Choi, B So, G Yoo, S Kim, O Nam, "Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate," Diamond Relat. Mater., 114, 108335, (2021)

B So, J Lee, C Cheon, J Lee, U Choi, M Kim, J Song, J Chang, O Nam, "Void containing AlN layer grown on AlN nanorods fabricated by polarity selective epitaxy and etching method," AIP Adv., 11 (4), (2021)

J Lee, T Kwak, G Yoo, S Kim, O Nam, "Overgrowth of single crystal diamond using defect-selective etching and epitaxy technique in chemical vapor deposition," J. Nanosci. Nanotechnol., 21 (8), 4412-4417, (2021)

J Lee, H Jang, T Kwak, U Choi, B So, O Nam, "Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity," Solid-State Electron., 165, 107751, (2020)

Y Nam, U Choi, K Lee, T Jang, D Jung, O Nam, "Effect of AlxGa1−xN buffer layer on the structural and electrical properties of AlGaN/GaN/AlxGa1−xN double heterojunction high electron mobility transistor structures," J. Vac. Sci. Technol. B, 38 (2), (2020)

U Choi, HS Kim, K Lee, D Jung, T Kwak, T Jang, Y Nam, B So, MJ Kang, O Nam, "Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire," Phys. Status Solidi A, 217 (7), 1900695, (2020)

U Choi, D Jung, K Lee, T Kwak, T Jang, Y Nam, B So, O Nam, "The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor," Phys. Status Solidi A, 217 (7), 1900694, (2020)

J Lee, H Jang, T Kwak, U Choi, B So, O Nam, "Comparison of MoS2/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method," Phys. Status Solidi A, 217 (7), 1900722, (2020)

T Kwak, J Lee, G Yoo, H Shin, U Choi, B So, S Kim, O Nam, "Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition," Phys. Status Solidi A, 217 (12), 1900973, (2020)

B So, C Cheon, J Lee, J Lee, T Kwak, U Choi, JD Song, J Chang, O Nam, "Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer," Thin Solid Films, 708, 138103, (2020)

J Lee, ST Yoo, B So, KC Park, O Nam, "Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping," Thin Solid Films, 711, 138292, (2020)

M Kim, T Kwak, KR Ku, O Nam, "Effects of NH3 pre-treatment time on nitrogen-polar GaN grown on carbon-face 4H-SiC using high-temperature metal-organic chemical vapor deposition," J. Ceram. Process. Res., 21 (5), 579-585, (2020)

T Kwak, J Lee, B So, U Choi, O Nam, "Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition," J. Cryst. Growth, 510, 50-55, (2019)

U Choi, K Lee, J Han, T Jang, Y Nam, B So, T Kwak, O Nam, "Effect of ammonia pretreatment on crystal quality of N-polar GaN grown on SiC by metalorganic chemical vapor deposition," Thin Solid Films, 675, 148-152, (2019)

T Kim, B So, J Lee, O Nam, "Effect on optical, structural and electrical properties by the AlGaN/AlGaN multi quantum wells with different well and barrier thicknesses," Thin Solid Films, 680, 31-36, (2019)

ST Yoo, B So, HI Lee, O Nam, K Chang Park, "Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping," AIP Adv., 9 (7), (2019)

U Choi, K Lee, T Kwak, D Jung, T Jang, Y Nam, B So, HS Kim, HY Cha, O Nam, "Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT," Jpn. J. Appl. Phys., 58 (12), 121003, (2019)

B So, J Kim, T Kwak, T Kim, J Lee, U Choi, O Nam, "Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers," RSC Adv., 8 (62), 35528-35533, (2018)

J Kim, U Choi, J Pyeon, B So, O Nam, "Deep-ultraviolet AlGaN/AlN core-shell multiple quantum wells on AlN nanorods via lithography-free method," Sci. Rep., 8 (1), 935, (2018)

KH Kim, K Lee, H Hong, D Yang, WH Ryu, O Nam, YC Kim, "Functionalized inclined-GaN based nanoneedles," J. Ind. Eng. Chem., 59, 184-191, (2018)

B So, J Kim, E Shin, T Kwak, T Kim, O Nam, "Efficiency improvement of deep‐ultraviolet light emitting diodes with gradient electron blocking layers," Phys. Status Solidi A, 215 (10), 1700677, (2018)